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SRFET
AOD4110 N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOD4110 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V ID =40A (VGS = 10V) RDS(ON) < 7.2m (VGS = 10V) RDS(ON) < 10.5m (VGS = 4.5V)
UIS Tested! Rg,Ciss,Coss,Crss Tested
D
TO-252 D-PAK Top View Drain Connected to Tab
G S
SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode
G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain CurrentA Avalanche Current C Repetitive avalanche energy L=0.3mH C TC=25C Power Dissipation Power Dissipation
B C
Maximum 30 20 40 40 180 22 18 25 94 63 31 6 4 -55 to 175
Units V V A
TC=25C
G G
TC=100C TA=25C TA=70C
ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
A A mJ W W C
TC=100C TA=25C TA=70C
A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient D Maximum Junction-to-Case
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 15 41 2
Max 20 50 2.4
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4110
Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=250uA, VGS=0V VDS=30V, VGS=0V TJ=125C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,VGS=0V Diode Forward Voltage G Maximum Body-Diode + Schottky Continuous Current TJ=125C 1.3 180 6 9.0 8.5 55 0.37 0.5 40 2154 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 474 185 0.75 37 VGS=10V, VDS=15V, ID=20A 17.8 6.6 7.6 6.8 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=300A/s
2
Min 30
Typ
Max
Units V
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
0.1 20 0.1 1.6 2 7.2 11.0 10.5
mA A V A m m S V A pF pF pF
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
2650
1.1 45
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
nC nC nC ns ns ns ns 18 ns nC
7.2 25.2 5.8 12 10.5
Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/s
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance.The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. Rev0: Apr.2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4110
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
180 6V 150 120 ID (A) 90 60 30 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 12 Normalized On-Resistance 1.8 ID=20A 1.6 1.4 VGS=4.5V 1.2 1 0.8 0 5 10 15 20 25 30 0 30 60 90 120 150 180 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V 10V 25 7V 4.5V ID(A) 4.0V 20 15 10 5 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 125C 25C 30 VDS=5V
3.5V VGS=3V
10 RDS(ON) (m) VGS=4.5V 8 VGS=10V 6
4
13 ID=20A 11 RDS(ON) (m) 9 7 5 3 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C
1.0E+02 1.0E+01 1.0E+00 IS (A) 125C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4110
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 8 16 24 32 40 Qg (nC) Figure 7: Gate-Charge Characteristics Vds=15V ID=20A 3600 3000 Capacitance (pF) Ciss 2400 1800 1200 600 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Crss Coss
1000 10s 100 RDS(ON) limited 10ms DC 1 TJ(Max)=175C TC=25C 100s Power (W) 1ms
100 90 80 70 60 50 0.001 TJ(Max)=175C TC=25C
ID (Amps)
10
0.1
0.01 0.01
0.1
1 VDS (Volts)
10
100
0.01
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0.1
Single Pulse 0.01 0.00001 0.0001 0.001
D=Ton/T TJ,PK =TC+PD.ZJC.RJC RJC=2.4C/W
PD Ton T 10 100
0.01
0.1
1
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4110
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 ID(A), Peak Avalanche Current Power Dissipation (W) 0.001 75 60 45 30 15 0 0.00001 0.0001 0 25 50 75 100 125 150 175 T CASE (C) Figure 13: Power De-rating (Note B)
90 TA=25C 60 TA=150C 30
0 0.000001
Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability
50 40 Current rating ID(A) 30 20 10 0 0 25 50 75 100 125 150 175 T CASE (C) Figure 14: Current De-rating (Note B,G)
100 80 Power (W) 60 40 20 0 1E-04 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.01 TJ(Max)=150C TA=25C
10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1 D=Ton/T TJ,PK =TA+PDM.ZJA.RJA RJA=50C/W 0.001 0.01 0.1 1 PD Ton T 100 1000
0.01 Single Pulse 0.001 0.00001
0.0001
10
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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